Title of article
substrates: growth conditions and optical properties
Author/Authors
S. Blanc، نويسنده , , A. Arnoult، نويسنده , , H. Carrère، نويسنده , , C. Fontaine، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
252
To page
254
Abstract
GaAsN and GaInAsN have been grown on As(B)- and Ga(A)-rich {111} substrates by molecular beam epitaxy. N incorporation has been found to be highly dependent on the substrate orientation. The influence of growth conditions on optical properties of View the MathML source and View the MathML source oriented GaAsN quantum wells has been determined. The better orientation appears to be the Ga-rich one for GaAsN and GaInAsN/GaAs wells.
Keywords
{111} orientation , Molecular beam epitaxy , SIMS , III–V semiconductors , Dilute nitrides , Photoluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045007
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