Title of article
Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
Author/Authors
R.A. Taylor، نويسنده , , J.D. Smith، نويسنده , , J.H. Rice، نويسنده , , J.F. Ryan، نويسنده , , T. Someya، نويسنده , , Y. Arakawa ، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
255
To page
257
Abstract
The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen.
Keywords
GaN , Gain dynamics , Stripe-length
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045008
Link To Document