Title of article
Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices
Author/Authors
Marta Gryglas، نويسنده , , Michal Baj، نويسنده , , Benoit Jouault، نويسنده , , Giancarlo Faini، نويسنده , , Antonella Cavanna، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
303
To page
304
Abstract
Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I–V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers δ-doped with silicon in the middle of AlAs layer. At View the MathML source and magnetic field up to View the MathML source we resolved well-separated peaks attributed to resonant tunnelling via individual donors.
Keywords
X-minimum-related donor , Resonant tunnelling , Single impurity
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045048
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