Influence of oxidation on the transport properties of IV–VI-thin films

The effect of oxidation at room temperature on the thickness dependences of transport properties of IV–VI (PbS, PbSe, PbTe) thin films was studied. The effect of charge carrier concentration on the character of these dependences in n-PbTe thin films was detected. The regularities in the behavior of IV–VI thin films exposed to air were established. The experimental results are interpreted within the framework of models taking into consideration the presence of compensating acceptor states created by oxygen on the film surface.