Title of article :
Electrostatic quantum dots with designed shape of confinement potential
Author/Authors :
K. Lis، نويسنده , , S. Bednarek، نويسنده , , B. Szafran، نويسنده , , J. Adamowski، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
4
From page :
494
To page :
497
Abstract :
In electrostatic (gated) quantum dots, the potential confining the electrons is generated by the electrostatic field, which is created by the external voltages applied to the leads. Changing the geometry of the nanodevice we can obtain a diverse class of confinement potentials. We discuss the choice of the nanodevice parameters, which allows us to get the confinement potentials with the designed shape: from the rectangular potential well to the potential well with smooth edges. In particular, we find the conditions, under which the confinement potential possesses the Gaussian shape or is parabolic in a large region of the quantum dot.
Keywords :
Quantum dot , Confinement potential
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1046167
Link To Document :
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