Title of article
Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD
Author/Authors
P. Ferrandis، نويسنده , , L. Vescan، نويسنده , , B. Holl?nder، نويسنده , , V. Dashtizadeh، نويسنده , , C. Dieker، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
507
To page
509
Abstract
The influence of the Si overgrowth in the Ge/Si(0 0 1) and Ge/Si(1 1 0) systems has been studied. Rutherford backscattering spectroscopy analysis pointed out a reduced number of Ge atoms in capped samples performed on Si(1 1 0). Atomic force microscopy and transmission electron microscopy allowed us to propose a model to explain this behaviour. A way of explanation is given to clarify why such a phenomenon does not take place in the samples realized on Si(0 0 1).
Keywords
View the MathML source , Ge , Low pressure chemical vapour deposition , Capping , Etch
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046175
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