Title of article
MBE grown Ge dots on Si/SiGe ion implanted buffers
Author/Authors
P.I. Gaiduk، نويسنده , , A. Nylandsted Larsen، نويسنده , , J. Lundsgaard Hansen، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
510
To page
512
Abstract
Stacks of six or eight bilayers of Ge/Si were grown by molecular beam epitaxy (MBE) on Si/Si0.5Ge0.5 buffer layers modified with in situ implantation of View the MathML source or Ge+ ions. The structure was investigated by transmission electron microscopy (TEM). Vertically correlated Ge islands are observed by TEM. Results from variation of pre-implantation, thickness of Ge layers and temperature of MBE growth are presented.
Keywords
Ge nanodots , Si–SiGe alloys , Molecular beam epitaxy
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046176
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