MBE grown Ge dots on Si/SiGe ion implanted buffers

Stacks of six or eight bilayers of Ge/Si were grown by molecular beam epitaxy (MBE) on Si/Si0.5Ge0.5 buffer layers modified with in situ implantation of View the MathML source or Ge+ ions. The structure was investigated by transmission electron microscopy (TEM). Vertically correlated Ge islands are observed by TEM. Results from variation of pre-implantation, thickness of Ge layers and temperature of MBE growth are presented.