Title of article
High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser
Author/Authors
A.E Zhukov، نويسنده , , A.R Kovsh، نويسنده , , S.S Mikhrin، نويسنده , , A.P Vasilʹev، نويسنده , , E.S Semenova، نويسنده , , N.A Maleev، نويسنده , , V.M Ustinov، نويسنده , , M.M Kulagina، نويسنده , , E.V Nikitina، نويسنده , , I.P Soshnikov، نويسنده , , Yu.M Shernyakov، نويسنده , , D.A Livshits، نويسنده , , N.V Kryjanovskaya، نويسنده , , D.S Sizov، نويسنده , , M.V Maximov، نويسنده , , A.F Tsatsulʹnikov، نويسنده , , N.N. Ledentsov 1، نويسنده , , D Bimberg، نويسنده , , Zh.I، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
589
To page
592
Abstract
Long-wavelength View the MathML source lasers grown on GaAs and based on several planes of self-organized quantum dots in an external quantum well demonstrate significant improvement of the external differential efficiency (88%) and the characteristic temperature View the MathML source. This is due to suppression of carrier pile-up in the waveguide region in combination with extended range of optical loss in which the ground-state lasing survives.
Keywords
Quantum dots , Diode lasers , Differential efficiency
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046221
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