Title of article
Optical gain in non-abrupt GaAs/AlxGa1−x quantum well lasers
Author/Authors
E.C. Ferreira، نويسنده , , E.L. Albuquerque، نويسنده , , J.A.P. da Costa، نويسنده , , P.W. Mauriz، نويسنده , , V.N. Freire، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
600
To page
601
Abstract
The optical gain of unstrained non-abrupt GaAs/AlxGa1−xAs single quantum wells as a function of the energy of the radiation, width of the well, and interface thickness is calculated. Both the transversal electrical and the transversal magnetic light polarization are considered. All sub-bands transitions in the quantum well are taken into account. It is shown that the existence of non-abrupt interfaces decreases the gain and shifts its spectra to higher frequencies.
Keywords
Laser gain , GaAs/AlxGa1?xAs , Graded interfaces , Quantum well lasers
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046226
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