Author/Authors :
J. De la Torre، نويسنده , , A. Souifi، نويسنده , , M. Lemiti، نويسنده , , A. Poncet، نويسنده , , C. Busseret، نويسنده , , G. Guillot، نويسنده , , G. Brémond، نويسنده , , O. Gonzalez، نويسنده , , L. B. GARRIDO?، نويسنده , , J.R. Morante، نويسنده ,
Abstract :
In this work, we present photoluminescence (PL) and electroluminescence studies on thermal SiO2 Si-implanted light-emitting devices (LEDs) containing crystallites of size View the MathML source. The PL measurements reveal a bulk-type behavior of nc-Si-associated PL confirming that the PL obtained at View the MathML source is closely related to Q-confined nc-Si. Analysis of electrical transport mechanisms confirms that the current is related to a tunneling process as expected and not to Fowler–Nordheim regime. Finally, threshold electric field for light emission obtained was as low as View the MathML source, confirming the real potential of a such Si-implanted material for LEDs based on Si.
