Title of article :
Temperature dependence of responsivity in quantum dot infrared photodetectors
Author/Authors :
S.E. Schacham، نويسنده , , G. Bahir، نويسنده , , E. Finkman، نويسنده , , F.H. Julien، نويسنده , , J. Brault، نويسنده , , M. Gendry، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
2
From page :
636
To page :
637
Abstract :
Photoconductive spectra of InAs quantum dots embedded within InAlAs barriers show several peaks, ranging from 4 to View the MathML source. The nature of these peaks differs, as indicated by their dependence on bias and on temperature. The long wavelength peak drops rapidly with temperature, while the first peak hardly changes up to View the MathML source. While the wide peak around View the MathML source depends linearly on bias, indicating a direct excitation into the quasi-continuum, the peak at View the MathML source increases super-linearly since the photocarriers are generated by a two-step process, excitation into a bound level followed by tunneling to the continuum. This explains the drop with temperature, since as the temperature increases more carriers relax from the excited state back to the ground level rather than tunneling into the continuum.
Keywords :
Quantum dot infrared photodetectors (QDIP) , Recombination dynamics
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1046239
Link To Document :
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