Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

Energy loss rates of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures are theoretically investigated over a wide range of temperature based on the electron–one-phonon and electron–two-phonon interactions. Calculations are presented for electron acoustic one-phonon interaction via deformation potential and piezoelectric coupling and electron–LO phonon interaction with hot phonon effect. In addition, energy loss rate due to electron-two-zone edge transverse acoustic (TA) phonons is also presented. A very good agreement is obtained between the calculations and experimental data in GaInAs/AlInAs structure with the inclusion of electron–two-zone edge TA phonon interaction. In all these three structures energy loss is dominated by (i) acoustic one-phonon scattering at low temperatures, (ii) two-TA zone edge phonons at intermediate temperatures and (iii) LO phonons at high temperatures. It is observed that, hot phonon effect reduces the energy loss rate considerably in these structures.