Composition dependence of energy structure and lattice structure in InGaAs/GaP

We have calculated the energy structure of GaP/InGaAs/GaP single quantum wells. Calculated energy structures show that the InGaAs well layer has the indirect energy structure in the lower indium composition range. By the photoluminescence measurements, differences of luminescence spectra were observed between the lower indium composition range and the higher indium composition range. Results of transmission electron microscopy observations revealed that good crystal-quality InGaAs layer structures were fabricated in the lower indium composition range. On the other hand, in the higher indium composition range, nanometer-scale dot formation and generation of dislocations were confirmed.