Title of article :
Nanosecond scale carrier dynamics of self-assembled InAs/AlAs quantum dots studied by time-resolved photoluminescence
Author/Authors :
Z. Ma، نويسنده , , K. Pierz، نويسنده , , J. Hubner، نويسنده , , W.W. Rühle، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Abstract :
Photo-excited carrier dynamics in the self-assembled InAs/AlAs quantum dot system are studied by time-resolved photoluminescence within the first two nanoseconds. Several unexpected energy shifts are observed, i.e., an initial redshift of ground state photoluminescence which is followed by a blueshift after ∼1 ns, and a continuous blueshift of the first excited states emission. Moreover, steady-state photoluminescence shows a continuous redshift of the ground state peak with increasing excitation intensity. Our data support the idea that for the carrier dynamics in the InAs/AlAs quantum dot system the existence of AlAs X-states, tunneling and scattering play an important role in the lateral carrier transfer in such a dense quantum dot system.
Keywords :
Ultrafast nonlinear optical phenomena , Semiconductor structures , Quantum dots
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures