• Title of article

    Barrier penetration in Kane type semiconductor nanostructures

  • Author/Authors

    F.M. Hashimzade، نويسنده , , A.M. Babayev، نويسنده , , S. Cakmak، نويسنده , , S. Cakmaktepe، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2005
  • Pages
    6
  • From page
    447
  • To page
    452
  • Abstract
    Particle penetration through a square potential and a step potential barrier are studied with the eight-band Kane Hamiltonians. It has found expressions for transmission probability and reflection coefficients of electrons for both potentials. It is shown in the Kane model that the transmission probability will have a finite value that is different from the one-band model at the state where the barrier height is infinite. The Landauer formula for resistance is applied to the Kane type semiconductor heterostructures.
  • Keywords
    Landauer formula , Transmission probability , Heterostructures
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2005
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1046488