Title of article
Barrier penetration in Kane type semiconductor nanostructures
Author/Authors
F.M. Hashimzade، نويسنده , , A.M. Babayev، نويسنده , , S. Cakmak، نويسنده , , S. Cakmaktepe، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
6
From page
447
To page
452
Abstract
Particle penetration through a square potential and a step potential barrier are studied with the eight-band Kane Hamiltonians. It has found expressions for transmission probability and reflection coefficients of electrons for both potentials. It is shown in the Kane model that the transmission probability will have a finite value that is different from the one-band model at the state where the barrier height is infinite. The Landauer formula for resistance is applied to the Kane type semiconductor heterostructures.
Keywords
Landauer formula , Transmission probability , Heterostructures
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046488
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