Title of article :
Self-assembling of C and Sn in Ge
Author/Authors :
V.A Elyukhin، نويسنده , , S.F D?az Albarr?n، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Pages :
4
From page :
552
To page :
555
Abstract :
Self-assembling of isoelectronic C and Sn impurities in Ge is predicted. The formation of the 1C4Sn tetrahedral cells is thermodynamically profitable in Ge-rich CxSnyGe1−x−y (4x
Keywords :
Self-assembling , Isoelectronic impurities
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2005
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1046502
Link To Document :
