Author/Authors :
S.Y. Huang، نويسنده , , S.Y. Xu، نويسنده , , J.D. Long، نويسنده , , Z. Sun، نويسنده , , X.Z. Wang، نويسنده , , Y.W. Chen-Yang، نويسنده , , T. Chen، نويسنده , , C. Ni، نويسنده , , Z.J. Zhang، نويسنده , , L.L. Wang، نويسنده , , X.D. Li، نويسنده , , P.S. Guo، نويسنده , , W.X. Que، نويسنده ,
Abstract :
Separated AlxIn1−xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1−xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1−xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.
