Influence of the built-in electric field on luminescent properties in self-formed single InxGa1−xN/GaN quantum dots

Based on the framework of effective-mass approximation and variational approach, luminescent properties are investigated theoretically in self-formed wurtzite InxGa1−xN/GaN quantum dots (QDs), considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the height L and the radius R) are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of InxGa1−xN/GaN QDs.