Long-wavelength broad band infrared photodetector using four asymmetric quantum wells

A theoretical investigation of GaAs/AlGaAs infrared detector consisting of four asymmetric quantum wells is presented. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 7.9, 9.2, 10.4, and 11.8 μm, respectively. The device operation is based on intersubband bound to bound transition.