Title of article :
Synthesis of single-crystalline Bi2O3 nanowires by atmospheric pressure chemical vapor deposition approach
Author/Authors :
Xiaoping Shen، نويسنده , , Shikui Wu، نويسنده , , Hui Zhao، نويسنده , , Qi Liu، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2007
Abstract :
Bismuth oxide (Bi2O3) nanowires have been synthesized on Au-coated Si substrates by atmospheric pressure chemical vapor deposition (APCVD) approach using Bi(S2CNEt2)3 as a precursor in the presence of oxygen. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the Bi2O3 nanowires have a diameter in the range of 50–100 nm and a length of up to tens of microns. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), high-resolution TEM and selected-area electron diffraction (SAED) demonstrate that the nanowires are composed of pure tetragonal phase β-Bi2O3 single crystal. The growth of the Bi2O3 nanowires could refer to a vapor–liquid–solid (VLS) mechanism.
Keywords :
Bi2O3 , Nanowires , Chemical vapor deposition , Preparation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures