Quantum electron transport modeling in double-gate MOSFETs based on multiband non-equilibrium Greenʹs function method

The formulation and calculation of quantum electron transport in double-gate metal oxide semi-conductor field effect transistors (DGMOSFETs) is presented based on multiband non-equilibrium Greenʹs function (NEGF) formalism. In the formulation we employ the empirical sp3s* tight-binding approximation (TBA) with nearest neighbor coupling to obtain a realistic fullband structure. The multiband NEGF is performed self-consistently with the Poisson equation to acquire the effect of space charge density. We compare the non-parabolicity feature of bandstructure with that of parabolic effective mass model. Due to the difference in energy dispersion relation, we have found that the results of multiband simulations are quite different with those based on conventional effective mass model.