Title of article
Valley susceptibility of interacting electrons and composite fermions
Author/Authors
N.C. Bishop، نويسنده , , M. Padmanabhan، نويسنده , , O. Gunawan، نويسنده , , T. Gokmen، نويسنده , , E.P. De Poortere، نويسنده , , Y.P. Shkolnikov، نويسنده , , E. Tutuc، نويسنده , , K. Vakili، نويسنده , , M. Shayegan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
4
From page
986
To page
989
Abstract
We report magnetotransport measurements of integer and fractional quantum Hall states in an AlAs quantum well where two conduction band valleys are occupied. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the “valley susceptibility” (the change of valley population with strain) for both electrons and composite Fermions. The data reveal that these valley susceptibilities are significantly enhanced over the band values, reflecting the role of strong interaction. Moreover, the measured valley susceptibilities are quite similar to the values of spin susceptibility, establishing the analogy between the spin and valley degrees of freedom.
Keywords
Valley susceptibility , Composite fermion , Multi-valley semi-conductor
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046952
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