• Title of article

    Valley susceptibility of interacting electrons and composite fermions

  • Author/Authors

    N.C. Bishop، نويسنده , , M. Padmanabhan، نويسنده , , O. Gunawan، نويسنده , , T. Gokmen، نويسنده , , E.P. De Poortere، نويسنده , , Y.P. Shkolnikov، نويسنده , , E. Tutuc، نويسنده , , K. Vakili، نويسنده , , M. Shayegan، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    986
  • To page
    989
  • Abstract
    We report magnetotransport measurements of integer and fractional quantum Hall states in an AlAs quantum well where two conduction band valleys are occupied. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the “valley susceptibility” (the change of valley population with strain) for both electrons and composite Fermions. The data reveal that these valley susceptibilities are significantly enhanced over the band values, reflecting the role of strong interaction. Moreover, the measured valley susceptibilities are quite similar to the values of spin susceptibility, establishing the analogy between the spin and valley degrees of freedom.
  • Keywords
    Valley susceptibility , Composite fermion , Multi-valley semi-conductor
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2008
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1046952