Title of article
Valley-splitting edge-channel transport in a Si/SiGe quantum Hall system
Author/Authors
K. Sugihara، نويسنده , , K. Hamaya، نويسنده , , M. Kawamura، نويسنده , , K. Sawano، نويسنده , , Y. Shiraki، نويسنده , , T. MACHIDA، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
1523
To page
1525
Abstract
We observe an adiabatic transport phenomena of electrons in valley-splitting quantum Hall edge channels for the first time using a high-mobility Si/SiGe two-dimensional electron system. We find that the scattering event between the valley-splitting edge channels is suppressed over a distance of View the MathML source, which is surprisingly longer than that expected from the valley-splitting energy gap in Si.
Keywords
Integer quantum Hall effect , Valley splitting , Edge channel , Si/SiGe heterostructure
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047124
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