Impurity scattering effects on transport through gate-all-around Si nanowires

We investigate effects of impurity scattering on current–voltage characteristics in a gate-all-around Si nanowire theoretically. Using non-equilibrium Greenʹs function technique, the self-energy for the impurity scattering is incorporated under the self-consistent Born approximation. We show that the impurity scattering changes the electronic structure of the Si nanowire largely and, thus, results in very different current–voltage curves compared to the case of the free-impurity scattering.