Author/Authors :
W.R. Clarke، نويسنده , , C.E. Yasin، نويسنده , , A.R. Hamilton، نويسنده , , A.P. Micolich، نويسنده , , M.Y. Simmons، نويسنده , , K. MURAKI، نويسنده , , Y. Hirayama، نويسنده , , M. Pepper، نويسنده , , D.A. Ritchie، نويسنده ,
Abstract :
We compare directly the metallic behavior of high-quality, two-dimensional hole systems (2DHSs) in two GaAs device structures—one dominated by short-range disorder and the other by long-range disorder. We find that the type of disorder strongly affects the metallic behavior of the 2DHSs. In particular, we find that metallic behavior is enhanced in 2D systems with a high proportion of large-angle scattering events.
