Title of article :
Tuning the confinement strength in a split-gate quantum wire
Author/Authors :
W.K. Hew، نويسنده , , K.J. Thomas، نويسنده , , I. Farrer، نويسنده , , D. Anderson، نويسنده , , D.A. Ritchie، نويسنده , , M. Pepper، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Pages :
3
From page :
1645
To page :
1647
Abstract :
We present conductance measurements of a quantum wire defined by gating techniques which demonstrate independent control over the strength of the confinement potential and the carrier density. This is achieved by the introduction of a top gate over the standard split gates, so that the Fermi level in the wire can be adjusted without strongly affecting the confinement potential, permitting access to a wider range of transport régimes than is possible in conventional split-gate devices. In particular, the régime of weak confinement necessary for the formation of a ferromagnetic Wigner crystal predicted by Klironomos, Meyer and Matveev [Europhys. Lett. 74 (2006) 679] can be explored. Subband spectroscopy confirms our capability to control the strength of the confinement potential.
Keywords :
Quantum wire , Wigner crystal
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2008
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1047164
Link To Document :
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