Author/Authors :
J.R. Gell، نويسنده , , M.B. Ward، نويسنده , , P. Atkinson، نويسنده , , S.P. Bremner، نويسنده , , D. Anderson، نويسنده , , C.E. Norman، نويسنده , , M. Kataoka، نويسنده , , C.H.W. Barnes، نويسنده , , G.A.C. Jones، نويسنده , , A.J. Shields، نويسنده , , D.A. Ritchie، نويسنده ,
Abstract :
The authors report surface-acoustic-wave-driven luminescence from a lateral p–n junction formed by molecular-beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Pulsed techniques are used to isolate the surface-acoustic-wave-driven emission from any emission due to pick-up of the free-space electromagnetic wave. The luminescence provides a fast probe of the signals arriving at the p–n junction allowing the response of the junction to the surface-acoustic-wave to be studied in the time domain. Oscillations in the surface-acoustic-wave-driven component of the light intensity are resolved at the resonant frequency of the transducer, suggesting that the surface-acoustic-wave is transporting electrons across the junction in packets.
