Transport in a p-type CdBxF2−x quantum well on an n-type CdF2 surface

The current–voltage measurements and tunnelling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin–orbit interaction (SOI) in the p-type nanostructures prepared on the surface of the n-CdF2〈Y〉bulk crystal. The findings of the hole conductance oscillations in the plane of the p-type nanostructures that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e2/h.