Room temperature emission from CdSe single quantum dots embedded in high bandgap barrier material

We investigated the impact of barrier design on both the photoluminescence and electroluminescence of CdSe quantum dots. Quantum dots embedded in ZnSSe/MgS barriers show a significant improvement of the room temperature quantum efficiency that allows us to detect efficient room temperature emission of a single quantum dot. Embedding the CdSe/ZnSSe/MgS active layer into a p–i–n structure, we could achieve electroluminescence from one single quantum dot at 4 K.