Self-consistent model of spin dependent tunneling in (Ga,Mn)As structures

We present a self-consistent theory of coherent tunneling in all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. We show that effects of the charge redistribution of free carriers caused by their mutual interaction affect crucially the voltage dependence of spin-injection in Zener–Esaki diodes, whereas, they have little impact on the tunneling magnetoresistance in trilayer structures, and they do not change significantly the tunneling anisotropic magnetoresistance in (Ga,Mn)As junctions.