Title of article
Various photoluminescence properties due to Γ–X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses
Author/Authors
Naoki Ohtani، نويسنده , , Hiroyuki Endo، نويسنده , , Shingo Hiratsuka، نويسنده , , Hiroshi Kitamura، نويسنده , , Toshinari Takamatsu، نويسنده , , Makoto Hosoda، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
2016
To page
2018
Abstract
The electric-field dependence of photoluminescence (PL) spectra in a GaAs/AlAs multi-quantum well (MQW) was investigated, in which QWs with different thicknesses are casually contained. PL spectra reveal various properties due to the combination effect of interface roughness and Γ–X scattering even in type-I band configuration. A PL signal caused by LO-phonon-assisted carrier relaxation between first excited states (Γ2 states) having different energy values due to different QW thickness was also observed. The observation of PL signals from excited states in MQW provides fruitful information on carrier injection into excited states due to Γ–X scattering and structural imperfection of MQWs.
Keywords
Multi-quantum well , Photoluminescence , ?–X scattering
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047277
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