• Title of article

    Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots

  • Author/Authors

    C. Testelin، نويسنده , , E. Aubry، نويسنده , , B. Eble، نويسنده , , F. Bernardot، نويسنده , , M. Chamarro، نويسنده , , A. Lemaître، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    3
  • From page
    2072
  • To page
    2074
  • Abstract
    We report on the precise determination of the electron Landé g factor and its anisotropy in self-assembled InAs/GaAs quantum dots (QDs), by means of measurements of Larmor precession frequencies in photoinduced circular dichroism (PCD) experiments performed with an oblique magnetic field. This optical technique, applied to an ensemble of QDs, is able to measure the electronic g factor corresponding to ground-state electrons resident in QDs emitting at a given energy of fundamental optical transition. In good agreement with recent theoretical results, we measure |g⊥|=0.397±0.003 and |g∥|=0.18±0.02 for QDs emitting at 1.32 eV.
  • Keywords
    InAs/GaAs quantum dots , Electron Landé g factor , Optical ps pump-probe experiments
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2008
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1047295