Title of article :
Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots
Author/Authors :
C. Testelin، نويسنده , , E. Aubry، نويسنده , , B. Eble، نويسنده , , F. Bernardot، نويسنده , , M. Chamarro، نويسنده , , A. Lemaître، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
We report on the precise determination of the electron Landé g factor and its anisotropy in self-assembled InAs/GaAs quantum dots (QDs), by means of measurements of Larmor precession frequencies in photoinduced circular dichroism (PCD) experiments performed with an oblique magnetic field. This optical technique, applied to an ensemble of QDs, is able to measure the electronic g factor corresponding to ground-state electrons resident in QDs emitting at a given energy of fundamental optical transition. In good agreement with recent theoretical results, we measure |g⊥|=0.397±0.003 and |g∥|=0.18±0.02 for QDs emitting at 1.32 eV.
Keywords :
InAs/GaAs quantum dots , Electron Landé g factor , Optical ps pump-probe experiments
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures