Author/Authors :
E. Gallardo، نويسنده , , S. Lazi?، نويسنده , , J.M. Calleja، نويسنده , , J. Miguel-Sanchez، نويسنده , , M. Montes، نويسنده , , A. Hierro، نويسنده , , R. Gargallo-Caballero، نويسنده , , A. Guzm?n، نويسنده , , E. Mu?oz، نويسنده , , A.M. Teweldeberhan، نويسنده , , S. Fahy، نويسنده ,
Abstract :
We report on resonant inelastic light scattering in dilute AlGaAsN films. Intense narrow peaks associated to N-related local vibration modes (LVM) have been observed around 325, 385, 400, 450, 500 and 540 cm−1. Their frequencies are compared to density functional theory supercell calculations of AlnGa4−nN complexes (n=1−4). We find clear indications of the formation of Al4N complexes. The values of the extended phonon frequencies reveal changes in the N distribution depending on the growth conditions. The LVM spectra are resonant in the energy range from 1.75 to 1.79 eV, which corresponds to an N-related electronic transition. Our results confirm the preferential bonding of N to Al in AlGaAsN.
