Title of article :
Magneto-ballistic effects in non-centrosymmetric GaAs/AlGaAs cross junctions
Author/Authors :
U. Wieser، نويسنده , , M. Knop، نويسنده , , U. Kunze، نويسنده , , D. Reuter، نويسنده , , A.D. Wieck، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
Magneto-ballistic transport is studied in a mesoscopic four-terminal junction with broken symmetry in the classical ballistic transport regime. Depending on the measurement configuration the device acts as a non-centrosymmetric Hall junction or a ballistic rectifier. In Hall configuration the absolute value of the Hall voltage depends on the current polarity. This nonlinearity is attributed to a current-polarity-dependent feeding of ballistic electrons into the Hall probes. A centrosymmetric reference sample shows the well-known linear Hall characteristic. In rectifier configuration the rectified inertial-ballistic signal is superimposed by the Hall component. The inertial-ballistic component is maintained in perpendicular magnetic fields exceeding View the MathML source.
Keywords :
Ballistic rectification , Hall effect , Magneto-ballistic transport
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures