Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy

We have investigated the optical properties of single InP nanowires (NWs) grown by selective-area metalorganic vapor phase epitaxy. Systematic measurements on several single NWs revealed that some of they exhibited good optical quality at low temperature. Band gap energy of InP NWs with wurtzite crystal structure was found to be larger by about 88 meV than that of zincblende InP, in good agreement with theoretical prediction.