Study of the effect of spatial electric field on the energy levels in a GaAs/AlAs cubic quantum dot

The effect of spatial electric field on the electronic structures for carriers in a cubic GaAs/AlAs quantum dot is considered. The energy levels and wave functions are analytically calculated within the effective mass approximation and finite barrier potential. The results show the ground state energy of electron decreases with increases in the strength of electric field. The results obtained by this method are compared with numerical investigations.