Title of article :
Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal
Author/Authors :
P.V. Galiy، نويسنده , , A.V. Musyanovych and T.M. Nenchuk، نويسنده , , O.R. Dveriy، نويسنده , , A. Ciszewski، نويسنده , , P. Mazur، نويسنده , , S. Zuber، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
The topography of the (1 0 0) cleavage surfaces of In4Se3 layered semiconductor crystal was analyzed by atomic force microscopy (AFM) in ultrahigh vacuum. The shape and dimensions of subsequent profiles well correspond to the lattice parameters derived from bulk crystal structure obtained by X-ray diffraction. The local force curves for the cleavage surfaces under different experimental conditions are discussed.
Keywords :
Layered semiconductor surface , Low-dimensional structures , atomic force microscopy , Force curves
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
