Title of article
Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal
Author/Authors
P.V. Galiy، نويسنده , , A.V. Musyanovych and T.M. Nenchuk، نويسنده , , O.R. Dveriy، نويسنده , , A. Ciszewski، نويسنده , , P. Mazur، نويسنده , , S. Zuber، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
5
From page
465
To page
469
Abstract
The topography of the (1 0 0) cleavage surfaces of In4Se3 layered semiconductor crystal was analyzed by atomic force microscopy (AFM) in ultrahigh vacuum. The shape and dimensions of subsequent profiles well correspond to the lattice parameters derived from bulk crystal structure obtained by X-ray diffraction. The local force curves for the cleavage surfaces under different experimental conditions are discussed.
Keywords
Layered semiconductor surface , Low-dimensional structures , atomic force microscopy , Force curves
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047610
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