Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red

The current–voltage (I–V) characteristics of Al/methyl-red/Ag surface-type structure were investigated in air at room temperature. The conventional forward bias I–V method, Cheung functions and modified Nordeʹs function were used to extract the diode parameters including ideality factor, barrier height and series resistance. The parameter values obtained from these three different methods were found in good agreement.