Title of article :
Si-based emissive microdisplays
Author/Authors :
P. Jaguiro، نويسنده , , P. Katsuba، نويسنده , , S. Lazarouk، نويسنده , , M. Farmer، نويسنده , , A. Smirnov، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
Standard silicon microelectronics technology is very attractive for use in microdisplays, because it is the shortest way to highest pixel densities and integration of matrix with column and row drivers into a common chip. Use of nanostructured silicon light-emitting diodes (Si LEDs) may completely solve the problem of low compatibility of display elements and silicon chip. At present time the most suitable kinds of Si LEDs are porous silicon avalanche LEDs. They have such advantages as long operation lifetime, continuous spectrum, low operation voltages and extremely sharp voltage–current characteristic, nanosecond response time and high operation current density. This paper considers the background, approaches and achievements in design of the silicon-based LEDs and high-resolution matrix displays.
Keywords :
Avalanche breakdown , Microdisplay , Nanostructured silicon , Passive matrix
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures