Title of article :
Carrier relaxation in image quantum dots
Author/Authors :
A.A. Prokofiev، نويسنده , , S.V. Goupalov، نويسنده , , A.S. Moskalenko، نويسنده , , A.N. Poddubny، نويسنده , , I.N. Yassievich، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots (QDs) in SiO2 matrix is considered. Interaction of confined holes with optical phonons is studied. The Huang–Rhys factor governing intraband transitions induced by this interaction is calculated. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
Keywords :
Clusters , Nanocrystals , Nanoparticles , Single particle states
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
