Possible magnetoresistance effect in abrupt ferromagnetic semiconductor n–n heterojunction

Magnetic semiconductors have generated continuing interest because of their potential for use in spintronic devices. In this article, we propose and theoretically analyze the magnetoresistance effect in an abrupt n–n ferromagnetic-semiconductor/ferromagnetic-semiconductor heterojunction. The current–voltage properties of the structure on magnetic moments parallel or antiparallel are analyzed by the double schottky barriers model. The model shows that the current saturates in both directions and the configuration can achieve a large magnetoresistance.