Title of article :
Oscillator strengths of electron quantum transitions in spherical nano-systems with donor impurity in the center
Author/Authors :
V.A. Holovatsky، نويسنده , , O.M. Makhanets، نويسنده , , O.M. Voitsekhivska، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Pages :
5
From page :
1522
To page :
1526
Abstract :
The exact solutions of Schrodinger equation for the electron in Coulomb field of donor impurity are obtained within the effective masses approximation and dielectric continuum model for the spherical quantum dot CdS/SiO2 and anti-dot ZnS/CdxZn1−xS. The dependences of electron energy spectrum and its probability density on nano-system radius are studied. The numeric calculations and analysis of oscillator strength of intersubband quantum transition from ground into first excited state at the varying radius are performed. It is shown that the oscillator strength for the big quantum dot is close to the respective value for the bulk semiconductor crystal.
Keywords :
Coulomb impurity , Quantum dot , Quantum anti-dot , Oscillator strength
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2008
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1047827
Link To Document :
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