Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO3) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO3. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10−5 cm2/V s at 100 nm is smaller than the value of 1.52×10−4 cm2/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm.