Author/Authors :
J. Lu، نويسنده , , P.F. Xu، نويسنده , , Y.G. Zhu، نويسنده , , H.J. Meng، نويسنده , , L. Chen، نويسنده , , WZ Wang، نويسنده , , X.H. Zhang، نويسنده , , J.H. Zhao، نويسنده , , G.Q. Pan، نويسنده ,
Abstract :
We report the interplay between the anisotropic strain relaxation and the in-plane uniaxial magnetic anisotropy in a 5 nm Fe film grown on GaAs (0 0 1) by molecular-beam epitaxy. Tetragonal distortion and in-plane anisotropic strain relaxation were accurately measured by synchrotron X-ray diffraction. A stronger coherence at the interface between Fe and GaAs is also observed in the annealed film. A competing model including magnetocrystalline anisotropy, interface anisotropy, and magnetoelastic anisotropy is proposed to characterize the in-plane magnetic anisotropy.
Keywords :
Fe thin film , Anisotropic strain relaxation , Magnetic anisotropy , X-ray diffraction
