Title of article :
Double-row transport in quantum wires of shallow confinement
Author/Authors :
W.K. Hew، نويسنده , , K.J. Thomas، نويسنده , , M. Pepper، نويسنده , , I. Farrer، نويسنده , , D. Anderson، نويسنده , , G.A.C. Jones، نويسنده , , D.A. Ritchie، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1118
To page :
1121
Abstract :
The bifurcation of the electron system in a quantum wire has been observed in the form of the suppression and disappearance of the quantised conductance plateau at 2e2/h. We now present low-temperature transport measurements of a top-gated split-gate quantum wire that serve to further characterise this double-row régime of transport. A small distortion of the confinement caused by asymmetrical biasing of the split gates gives rise to a radical change in the conductance characteristics of the wire, beginning with the introduction of a plateau at G=e2/h which rises to around 0.7×2e2/h with greater differential bias between the split gates. DC source–drain bias measurements in this régime show a split zero-bias peak at low conductances merging into a single peak around G=0.7×e2/h, which then persists up to the plateau at 4e2/h.
Keywords :
Quantum wire , One-dimensional electron transport , Wigner crystal , Electron interaction
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2009
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1048130
Link To Document :
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