Enhancement of negative magnetoresistance due to weak localization in image thin films on Si substrate

The structural and electrical properties of In2O3 films on Si (1 0 0) single crystal and a-SiO2 glass substrates grown by RF-magnetron sputtering method were investigated. As the results of X-ray diffraction spectra and atomic force microscope images of the films, we found that In2O3 film on Si has better crystalline quality than that on a-SiO2. Negative magnetoresistance (MR) caused by weak localization effect was observed for both films. The negative MR at 6 T of the films on Si is 3.5–10 times larger than that of the ones on a-SiO2 at 4 K. The result indicates that the inelastic scattering time of conduction electrons in the films on Si is much larger than that of the ones on a-SiO2, originating in fewer crystal defects in the films on Si.