Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

The band alignment of nearly lattice-matched In0.528Ga0.472P1−yNy/GaAs and GaAs/In0.528Ga0.472P1−yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample’s structures. For GaAs/In0.528Ga0.472P0.973N0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/GaAs and GaAs/In0.528Ga0.472P0.973N0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/GaAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1−xP1−yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.