Reconfirmation of the band offsets of InGaP/GaAs quantum wells

The InGaP/GaAs interface is gaining importance for the fabrication of electronic and optoelectronic devices .The major advantages are it has got a large valence band offset and use of Al can be avoided, which introduces deep levels, etc. that work as recombination centers. In our pioneering experimental work we made an accurate measurement of the band offsets of the lattice matched InGaP/GaAs interface using deep level transient spectroscopic (DLTS) technique. The conduction band offset and the valence band offset were measured independently; the estimated values were ΔEc=0.198 eV and ΔEv=0.285 eV. Till date various values of band offsets have been reported, which have been derived from different experimental and theoretical models.In this paper we present appropriate theoretical calculations, which reconfirm our previously obtained values of the band offsets. Relations for computing the band line-up and band offsets of InxGa1−xP/GaAs based heterostructures have been developed, which co-relates the mole fractions, strain, band positions and energy levels of both lattice matched and strained InGaP/GaAs heterointerfaces. Results obtained re-establish our experimental results.The theoretical calculations have also been crosschecked with reported experimental photoluminescence (PL) data for reconfirmation.