Title of article :
Equilibrium critical size of coherent InSb/GaSb quantum dot
Author/Authors :
Han Ye، نويسنده , , Pengfei Lu، نويسنده , , Zhongyuan Yu، نويسنده , , Boyong Jia، نويسنده , , Hao Feng، نويسنده , , Yumin Liu، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
2402
To page :
2405
Abstract :
We present a finite element method to simulate the strain field in InSb/GaSb quantum dots in the framework of anisotropic elasticity, before and after the onset of plastic relaxation. Taking the interaction between dislocation and free surface into consideration, the model directly calculates the residual strain in the dislocated system. Based on the energy balance between the two isolated states, the equilibrium critical size is determined. In the criterion, only the non-elastic dislocation core energy should be considered separately. The results are in satisfactory agreement with experimental data.
Keywords :
InSb/GaSb quantum dot , Residual strain , Equilibrium critical size , Finite element method
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2009
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1048357
Link To Document :
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