Author/Authors :
A.K. Nowak، نويسنده , , E. Gallardo، نويسنده , , D. Sarkar، نويسنده , , D. Sanvitto، نويسنده , , H.P. van der Meulen، نويسنده , , J.M. Calleja، نويسنده , , J.M. Ripalda، نويسنده , , L. Gonz?lez، نويسنده , , Y. Gonzalez-Garcia، نويسنده ,
Abstract :
Intensity correlation measurements on single InP/GaInP quantum dots (QDs) show antibunching at zero delay time, indicative of single photon emission. The antibunching time τR increases or decreases with temperature depending on the QD size as a result of the competition between: (1) thermal excitation of holes dominant in smaller QDs and (2) dark-to-bright exciton transition dominant in larger QDs. The antibunching minimum g(2)(0) remains below 0.2 up to 45 K.
